Memory programming method, memory device, and memory system

Abstract

The present disclosure provides a memory programming method, a memory device and a memory system. The memory device comprises a plurality of memory cells. The method comprises: performing a first incremental step pulse programming on the memory cells; performing a first programmed state verification on the memory cells; and performing a second incremental step pulse programming on the memory cells, comprising: determining an incremental voltage in the second incremental step pulse programming being less than a default incremental voltage, in response to a programming temperature of the memory cells being within a preset first temperature range. Implementations of the present disclosure can improve read margin of the memory cells, reduce read errors, and reduce overall loss for the performance of the memory device.