The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
May. 24, 2023
Applicant:
Nxp B.v., Eindhoven, NL;
Inventors:
Kuan-Hsiang Mao, Kaohsiung, TW;
Shu-Han Yang, Kaohsiung, TW;
Pey Fang Hiew, Kajang, MY;
Wen Hung Huang, Kaosiung, TW;
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/49 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/13 (2013.01); H01L 2224/0231 (2013.01); H01L 2224/0233 (2013.01); H01L 2224/02373 (2013.01); H01L 2224/02375 (2013.01); H01L 2224/02377 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/13014 (2013.01); H01L 2224/13021 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2924/01029 (2013.01);
Abstract
A method of manufacturing a semiconductor device is provided. The method includes forming a redistribution layer (RDL) over an active side of a semiconductor die. A die pad of the semiconductor die is connected to an interconnect segment of the RDL by way of a bond wire. An encapsulating layer is formed over the active side of the semiconductor die such that exposed portions of the die pad and the bond wire are embedded in the encapsulating layer.