Semiconductor structure comprising power deliver network structure

Abstract

Provided is a semiconductor including a substrate, a semiconductor element disposed on the substrate, an interconnect structure, first and second power deliver lines, and first and second power deliver network (PDN) structures. The interconnect structure is disposed in the element region, above the semiconductor element, and electrically connected with the semiconductor element. The first and the second power deliver lines are disposed above the interconnect structure and electrically connected to the first and the second power supplies, respectively. The first PDN structure is disposed between the substrate and the first power deliver line, and connected to the first power deliver line and a lowest circuit layer of the interconnect structure. The second PDN structure is disposed between the substrate and the second power deliver line, and connected to the second power deliver line and the lowest circuit layer of the interconnect structure.