The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
Jul. 27, 2022
Applicant:
United Microelectronics Corp., Hsin-Chu City, TW;
Inventor:
Mengkai Zhu, Singapore, SG;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H10D 86/00 (2025.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 21/7624 (2013.01); H01L 21/76832 (2013.01); H01L 21/76895 (2013.01); H10D 30/6758 (2025.01); H10D 86/201 (2025.01);
Abstract
A semiconductor device includes: a substrate having a first semiconductor layer, an insulating layer, and a second semiconductor layer; an active device on the substrate; an interlayer dielectric (ILD) layer on the active device; a first contact plug in the ILD layer and electrically connected to the active device; and a second contact plug in the ILD layer and the insulating layer, wherein a top surface of the second contact plug is higher than a top surface of the ILD layer.