The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
May. 05, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Eun Hyea Ko, Suwon-si, KR;
Hoon Han, Suwon-si, KR;
Byung Keun Hwang, Suwon-si, KR;
Young Hun Sung, Suwon-si, KR;
Youn Joung Cho, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of fabricating a semiconductor device includes forming a first layer which has a first surface, does not contain an acid, and contains a metal material. The method includes forming, on the first layer, a second layer which includes a trench exposing the first surface. The second layer has a second surface intersecting the first surface within the trench, and contains an acid and an organic material. The method further including a first precursor containing an alkoxy group and silicon; and forming a third layer containing silicon oxide on the second surface within the trench. The third layer is in contact with a portion of the first surface within the trench.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile