The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2026

Filed:

Jun. 22, 2023
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventor:

Takayuki Katsunuma, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01J 37/32449 (2013.01); H01L 21/30604 (2013.01); H01L 21/3065 (2013.01); H01L 21/308 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01J 2237/334 (2013.01);
Abstract

An etching method includes: (a) providing a substrate including an etching target film and a mask on the etching target film; (b) after (a), forming a metal-containing deposit on the mask by a first plasma generated from a first processing gas including a metal-containing gas and a hydrogen-containing gas; (c) after (b), deforming or modifying the metal-containing deposit by a second plasma generated from a second processing gas different from the first processing gas; and (d) after (c), etching the etching target film.


Find Patent Forward Citations

Katsunuma, Takayuki. (2026). Etching method and plasma processing apparatus (U.S. Patent No. 12588447). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12588447

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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