The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2026

Filed:

Aug. 12, 2022
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Ming Gao, Xi'an Shaanxi, CN;

Lizhong Sun, San Jose, CA (US);

Xiaodong Yang, Xi'an, CN;

Assignee:

Applied Materials Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 30/079 (2023.01); H10N 30/00 (2023.01); H10N 30/076 (2023.01); H10N 30/50 (2023.01);
U.S. Cl.
CPC ...
H10N 30/079 (2023.02); H10N 30/076 (2023.02); H10N 30/50 (2023.02); H10N 30/708 (2024.05);
Abstract

A method of reducing surface defects of a piezoelectric film layer includes depositing a first seed layer on a substrate, depositing an intermediate film layer on the first seed layer at a first temperature of approximately 350 degrees Celsius to approximately 700 degrees Celsius, depositing a second seed layer on the intermediate film layer, and depositing a piezoelectric film layer at a second temperature of less than 200 degrees Celsius. The piezoelectric film layer has a surface cone defect count of less than or equal to 2 per 100 micronsof surface area of the piezoelectric film layer. In some embodiments, no vacuum breaks occur between depositions of the first seed layer, the intermediate film layer, the second seed layer, and the piezoelectric film layer.


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