The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2026

Filed:

May. 24, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Kisik Choi, Watervliet, NY (US);

Nicholas Anthony Lanzillo, Wynantskill, NY (US);

Daniel Charles Edelstein, White Plains, NY (US);

Lawrence A. Clevenger, Saratoga Springs, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 86/00 (2025.01); H10D 84/03 (2025.01); H10D 86/01 (2025.01); H10D 84/01 (2025.01);
U.S. Cl.
CPC ...
H10D 86/00 (2025.01); H10D 86/01 (2025.01); H10D 84/0149 (2025.01); H10D 84/038 (2025.01);
Abstract

A microelectronic structure including a first nanosheet transistor including a first backside metal line that has a first width as measure along a bottom surface of the first backside metal line and the first backside metal line has a second width as measure along a top surface of the first backside metal line. A second backside metal line that includes a second backside contact that is connected to the second source drain and the second backside metal line has a third width as measure along a bottom surface of the second backside metal line. The second backside metal line has a fourth width as measure along a top surface of the second backside metal line. The first width is larger than the second width and the third width is larger than the fourth width.


Find Patent Forward Citations

Xie, Ruilong. (2026). Backsides subtractive m1 patterning with backside contact repair for tight n2p space (U.S. Patent No. 12588280). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12588280

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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