The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
Aug. 10, 2023
International Business Machines Corporation, Armonk, NY (US);
Tao Li, Slingerlands, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Kisik Choi, Watervliet, NY (US);
Shogo Mochizuki, Mechanicville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure having improved placeholder position margin is provided. The semiconductor structure includes a backside source/drain contact structure contacting one source/drain region of a nanosheet transistor. The backside source/drain contact structure has a first portion and a second portion. The second portion of the backside source/drain contact structure, which is in direct contact with the source/drain region is confined by bottommost upper inner spacers, lower inner spacers and a semiconductor pedestal which vertically separates the bottommost inner spacers from the lower inner spacers.