The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2026

Filed:

Jun. 24, 2022
Applicants:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

National Taiwan University, Taipei, TW;

National Taiwan Normal University, Taipei City, TW;

Inventors:

Kuo-Yu Hsiang, Kaohsiung City, TW;

Chun-Yu Liao, Taipei City, TW;

Jen-Ho Liu, Taipei City, TW;

Min-Hung Lee, Taipei City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 53/30 (2023.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H10B 53/30 (2023.02);
Abstract

An integrated circuit device includes a substrate and a memory device. The memory device is over the substrate. The memory device includes a bottom electrode, a dielectric layer, an antiferroelectric layer, and a top electrode. The dielectric layer is over the bottom electrode. The antiferroelectric layer is over the dielectric layer. The top electrode is over the antiferroelectric layer.


Find Patent Forward Citations

Hsiang, Kuo-Yu. (2026). Integrated circuit device and method for fabricating the same (U.S. Patent No. 12588214). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12588214

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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