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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12588199 B1

PDFFull Text
Date of Patent:
Mar. 24, 2026

Filed:

Sep. 09, 2022

Non-volatile memory device and electronic system including the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Dae-Hun Choi, Hwaseong-si, KR;

Jae Chul Lee, Hwaseong-si, KR;

Byung-Sun Park, Suwon-si, KR;

Seung Jae Sim, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Attorney:

Wolf, Greenfield & Sacks, P.C.

Primary Examiner:

Yara B Green

Assistant Examiner:

Benjamin Michael Kupp

Int. Cl.
CPC ...
H10B 43/27 (2023.01); G11C 5/06 (2006.01); G11C 16/04 (2006.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); G11C 5/06 (2013.01); G11C 16/0483 (2013.01); H10B 43/10 (2023.02); H10B 43/35 (2023.02); H10B 43/40 (2023.02);
Abstract

A non-volatile memory device includes a substrate having a cell array region and an extension region. A mold structure includes a plurality of gate electrodes and a plurality of mold insulating layers alternately stacked on the substrate such that the mold structure has a step shape that steps downwardly in the extension region in a direction away from the cell array region. A channel structure penetrates through the mold structure in the cell array region, and a cell contact structure penetrates through the mold structure in the extension region. A portion of the cell contact structure is in contact with a portion of an uppermost one of the gate electrodes. The cell contact structure includes a first portion in contact with a side surface of the uppermost one of the gate electrodes and a second portion in contact with a top surface of the uppermost one of the gate electrodes. A width of the first portion is smaller than a width of the second portion.

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Choi, Dae-Hun. (2026). Non-volatile memory device and electronic system including the same (U.S. Patent No. 12588199). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12588199

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