Memory device and operation method thereof, memory system, and computer system

Abstract

Examples of the present application disclose a memory device, an operation method, a memory system, and a computer system. The memory device includes: a memory array including a first sub-array and a second sub-array, wherein the first sub-array includes a plurality of first memory cell rows, and the second sub-array includes a plurality of second memory cell rows; and a peripheral circuit comprising: a plurality of redundant control switch components coupled to the plurality of second memory cell rows one-to-one; and a word line drive component coupled to each of the plurality of redundant control switch components, wherein each redundant control switch component is configured to: in response to a first redundant selection signal, be in an on state and transmit a corresponding redundant control signal to a corresponding word line drive component; and the corresponding word line drive component is configured to: in response to the redundant control signal, drive a second memory cell row of the plurality of second memory cell rows that is configured to replace the first memory cell row indicated by the input address information.