The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
Oct. 30, 2023
Board of Regents, the University of Texas System, Austin, TX (US);
Bilal Akin, Richardson, TX (US);
Masoud Farhadi, Dallas, TX (US);
Abdolrahman Sajadi, Dallas, TX (US);
Bhanu Teja Vankayalapati, Richmond, TX (US);
Board of Regents, The University of Texas System, Austin, TX (US);
Abstract
An apparatus and method are provided for estimating junction temperature in a metal-oxide-semiconductor field-effect transistor (MOSFET), such as a silicon carbide (SiC) MOSFET, by capturing switching transients in a source path. A measurement circuit detects a voltage across a stray inductive element during a turn-on or turn-off phase and converts the transient into a pulse having a width proportional to a rise time or fall time. A processor determines junction temperature based on the pulse width and stored correlations between transient durations and temperature. An auxiliary switch circuit may temporarily insert a gate resistance to facilitate transient capture. Aging effects are compensated by analyzing temperature-dependent variations in rise and fall times to adjust temperature estimation over the device lifetime. The system can be integrated into gate driver circuitry for real-time monitoring without substantial disruption to normal converter operation.