The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
Nov. 06, 2024
Applicant:
Resonac Corporation, Tokyo, JP;
Inventor:
Yoshikazu Umeta, Tokyo, JP;
Assignee:
Resonac Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 3/00 (2006.01); C30B 25/20 (2006.01); C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
C30B 25/20 (2013.01); B32B 3/00 (2013.01); C30B 29/36 (2013.01);
Abstract
An objective of the present invention is to provide a SiC epitaxial wafer with a large diameter, a thin thickness, and few triangular defects. A SiC epitaxial wafer includes a SiC substrate and a SiC epitaxial layer. The SiC substrate has a diameter of 195 mm or more and a thickness of 460 μm or less. The SiC epitaxial layer has a triangular defect density of 0.2 pieces/cmor less.
Umeta, Yoshikazu. (2026). Sic epitaxial wafer (U.S. Patent No. 12584243). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12584243
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile