The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
Jan. 29, 2021
Fraunhofer-gesellschaft Zur Förderung Der Angewandten Forschung E.v., Munich, DE;
Esk-sic Gmbh, Frechen, DE;
Jörg Adler, Meißen, DE;
Heike Heymer, Dresden, DE;
Matthias Hausmann, Frechen, DE;
Wenzel Klietz, Frechen, DE;
Jan Räthel, Dresden, DE;
Josef Garbes, Frechen, DE;
FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V., Munich, DE;
ESK-SIC GmbH, Frechen, DE;
Abstract
A method for separating impurities from silicon carbide, applicable to SiC powders from grinding sludges and to temperature-treated and purified silicon carbide powder. The method removes different impurities. Pulverulent SiC waste products having a SiC mass percentage of at least 50% and an average grain size d50 of 0.5 to 1000 μm, and that have been temperature-treated and cooled, are mechanically treated and physically separated. The physically separated SiC powder is divided into two fractions, one of which contains a mass of impurities greater than that of the other fraction by at least a factor of two.