The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
Aug. 29, 2022
Applicant:
Kokusai Electric Corporation, Tokyo, JP;
Inventor:
Naofumi Ohashi, Toyama, JP;
Assignee:
Kokusai Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/3065 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/3065 (2013.01); H01L 21/30655 (2013.01); H01J 37/32449 (2013.01); H01J 2237/3344 (2013.01); H01J 2237/3345 (2013.01); H01L 21/31144 (2013.01);
Abstract
There is provided a technique that includes forming a modified film by supplying a modifying gas to modify an unmasked deposited film on a substrate; and removing the modified film, including supplying a removal gas activated by plasma and supplying a protective-film-forming gas at least at the same time.
Ohashi, Naofumi. (2026). Substrate processing method, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium (U.S. Patent No. 12581882). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12581882
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile