The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2026

Filed:

Nov. 13, 2020
Applicant:

Enkris Semiconductor, Inc., Suzhou, CN;

Inventors:

Kai Cheng, Suzhou, CN;

Peng Xiang, Suzhou, CN;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); H10P 14/20 (2026.01);
U.S. Cl.
CPC ...
H10P 14/3416 (2026.01); C30B 25/18 (2013.01); C30B 29/403 (2013.01); H10P 14/2905 (2026.01); H10P 14/2926 (2026.01);
Abstract

The present application provides a substrate and a manufacturing method therefor. The substrate includes a silicon substrate and a protective layer, the silicon substrate includes a middle part and an edge part, and a thickness of the middle part is greater than a thickness of the edge part. The middle part has a to-be-grown surface, and a crystal orientation of the to-be-grown surface is different from a crystal orientation of surface of the edge part. The protective layer covers the edge part and is configured to prevent defects in the edge part from extending to the middle part during high-temperature processing.


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