The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2026

Filed:

Jul. 31, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Lijuan Zou, Slingerlands, NY (US);

Tao Li, Slingerlands, NY (US);

Feng Liu, Niskayuna, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/03 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2026.01); H10D 84/83 (2025.01); H10W 20/41 (2026.01); H10W 20/42 (2026.01);
U.S. Cl.
CPC ...
H10D 84/038 (2025.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 64/017 (2025.01); H10D 84/013 (2025.01); H10D 84/0135 (2025.01); H10D 84/0149 (2025.01); H10D 84/83 (2025.01); H10W 20/42 (2026.01); H10W 20/427 (2026.01);
Abstract

Embodiments of the present invention are directed to processing methods and resulting structures for providing power vias through a wafer backside. In a non-limiting embodiment of the invention, a gate and a source or drain (S/D) region are formed on a substrate. A bi-layer liner is formed in a gate cut of the gate. The bi-layer liner includes a first liner on sidewalls of the gate cut and a second liner between the first liner. A top portion of the second liner is replaced with a first portion of a backside power via and the semiconductor device is flipped. A bottom portion of the second liner is replaced with a second portion of the backside power via.


Find Patent Forward Citations

Zou, Lijuan. (2026). Backside power via (U.S. Patent No. 12581723). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12581723

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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