The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
Jun. 16, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H01L 21/265 (2006.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/69 (2025.01); H10D 62/10 (2025.01); H10D 62/17 (2025.01); H10D 62/53 (2025.01); H10D 62/60 (2025.01); H10D 64/01 (2025.01); B82Y 10/00 (2011.01); H10D 62/822 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6735 (2025.01); H01L 21/26506 (2013.01); H01L 21/26513 (2013.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6757 (2025.01); H10D 30/751 (2025.01); H10D 30/797 (2025.01); H10D 62/118 (2025.01); H10D 62/121 (2025.01); H10D 62/299 (2025.01); H10D 62/53 (2025.01); H10D 62/60 (2025.01); H10D 64/017 (2025.01); B82Y 10/00 (2013.01); H10D 62/822 (2025.01); H10D 64/021 (2025.01);
Abstract
A method of forming a semiconductor device includes forming a fin on a substrate, the fin comprising alternately stacked first semiconductor layers and second semiconductor layers, removing the first semiconductor layers to form a plurality of spaces each between adjacent two of the second semiconductor layers, implanting oxygen into the second semiconductor layers, and forming a gate structure wrapping around the second semiconductor layers.