Multistack metal-insulator-metal (mim) structure using spacer formation process for heterogeneous integration with discrete capacitors

Abstract

A multi-stack metal-insulator-metal (MIM) structure includes a plurality of conductive plates including a first group comprising odd-numbered ones of the plates and a second group comprising even-numbered ones of the plates. All of the conductive plates are of an identical material. A plurality of insulators are between the plurality of conductive plates; and a first plate via contact extends vertically through the plurality of conductive plates and the plurality of insulators. The first plate via contact is electrically coupled to the first group of conductive plates and electrically isolated from the second group of conductive plates. The second plate via contact extends vertically through the plurality of conductive plates and the plurality of insulators. The second plate via contact is electrically coupled to the second group of conductive plates and electrically isolated from the first group of conductive plates.