The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
Oct. 25, 2024
Applied Materials, Inc., Santa Clara, CA (US);
Bencherki Mebarki, Santa Clara, CA (US);
Sang-Heum Kim, Mountain View, CA (US);
Joung Joo Lee, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments described herein provide an apparatus and method for fabricating semiconductor devices with improved process control and performance. The apparatus includes a processing chamber with first and second RF coil assemblies generating primary and secondary plasmas in distinct regions, along with first and second electromagnet assemblies for independent magnetic field control. A removable biasable flux optimizer is disposed in the apparatus to modulate plasma distribution and directionality. The method involves a three-step sequence comprising Inductive coupled plasma (IMP) low energy deposition, deposition for enhanced step coverage, and etching for overhang removal. The ICP deposition utilizes primary and secondary plasmas generated by the RF coil assemblies, with intensified collisions achieved through chamber pressure increase. Additionally, a simultaneous deposition and etching process can be employed, with optional additional etching steps for improved overhang removal.