The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
May. 31, 2024
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Kyungjin Kim, San Jose, CA (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 16/04 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/349 (2013.01); G11C 16/0483 (2013.01); G11C 16/26 (2013.01);
Abstract
Apparatuses and methods for performing read operations using an offset based upon slow charge loss characteristics are provided. One example apparatus can include a controller configured to apply a read voltage to a word line in the array of memory cells during a read operation on the word line, wherein the read voltage includes an offset associated with a slow charge loss characteristic of the word line.
Quick Actions:
Kim, Kyungjin. (2026). Read operations with offset for slow charge loss (U.S. Patent No. 12580032). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12580032
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile