The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2026

Filed:

Jun. 10, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ching-Yu Chang, Yuansun Village, TW;

An-Ren Zi, Hsinchu City, TW;

Chin-Hsiang Lin, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/16 (2006.01); G03F 7/00 (2006.01); G03F 7/11 (2006.01); G03F 7/32 (2006.01); G03F 7/38 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G03F 7/168 (2013.01); G03F 7/11 (2013.01); G03F 7/325 (2013.01); G03F 7/38 (2013.01); G03F 7/70025 (2013.01); H01L 21/02118 (2013.01); H01L 21/02205 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01); H01L 21/0275 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate and applying a base composition to the photoresist layer, the base composition includes non-organic base, organic base, thermal base generator, or photobase generator. The photoresist layer is selectively exposed to actinic radiation to form latent pattern. The latent pattern is developed by applying developer composition to selectively exposed photoresist layer to form pattern in photoresist layer. The base composition is applied to photoresist layer during one or more operations selected from group consisting of applying base composition to substrate as underlayer before photoresist layer is formed and the composition is subsequently absorbed by photoresist layer, a pre-exposure baking operation, after photoresist layer is selectively exposed and before developing latent pattern, and after developing latent pattern.


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