The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2026
Filed:
Mar. 20, 2024
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Xiaoming Liu, Shanghai, CN;
Liujiang Yu, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
The present invention provides a parallel binary model for measuring a capacitance value of a gate oxide layer of a gate oxide MOS device. The parallel binary model is a parallel circuit model formed through parallel connection of a parallel capacitor Cp and an equivalent resistor Rp. The parallel binary model is used to measure the gate oxide MOS device through an LCR meter by adopting frequency f1 to obtain parallel capacitance Cp1 and parallel conductance Gp1. A dissipation factor D1 is calculated. In a case that D1<0.1, the measured parallel capacitance Cp1 is the capacitance value of the gate oxide layer of the gate oxide MOS device. In a case that D1>0.1, the parallel binary model is used to measure the gate oxide MOS device through the LCR meter by adopting frequency f2 to obtain parallel capacitance Cp2 and parallel conductance Gp2.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile