The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2026

Filed:

Mar. 29, 2024
Applicants:

Applied Materials, Inc., Santa Clara, CA (US);

National University of Singapore, Singapore, SG;

Inventors:

Wei Chun Lim, Singapore, SG;

Andrea Leoncini, Singapore, SG;

Han Vinh Huynh, Singapore, SG;

Sara Raquel Mota Merelo De Aguiar, Singapore, SG;

Assignees:

Applied Materials, Inc., Santa Clara, CA (US);

National University of Singapore, Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/18 (2006.01); C23C 16/44 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45551 (2013.01); C23C 16/18 (2013.01); C23C 16/4408 (2013.01); C23C 16/45553 (2013.01);
Abstract

Methods of depositing a passivation layer on a semiconductor substrate are described. The methods may include exposing a semiconductor substrate having a metal layer thereon to a precursor to form a passivation layer on the metal layer, the precursor having a general formula (I), where exposing the semiconductor substrate to the precursor may include a transmetallation process. The method may further include purging the semiconductor substrate.


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