The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2026

Filed:

Jul. 04, 2022
Applicant:

Korea Research Institute of Chemical Technology, Yuseong-gu, KR;

Inventors:

Eun-Ho Sohn, Yuseong-gu, KR;

Won Wook So, Yuseong-gu, KR;

In Joon Park, Yuseong-gu, KR;

Bong Jun Chang, Yuseong-gu, KR;

Hong Suk Kang, Yuseong-gu, KR;

Ju Hyeon Kim, Yuseong-gu, KR;

Ji Hoon Baik, Yuseong-gu, KR;

Sang Goo Lee, Yuseong-gu, KR;

Hyeon Jun Heo, Yuseong-gu, KR;

Shin Hong Yook, Yuseong-gu, KR;

Dong Je Han, Yuseong-gu, KR;

Ji Young Lee, Yuseong-gu, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C08F 220/14 (2006.01); C08F 220/22 (2006.01); C08J 5/18 (2006.01);
U.S. Cl.
CPC ...
C08F 220/14 (2013.01); C08F 220/22 (2013.01); C08J 5/18 (2013.01); C08F 2800/10 (2013.01); C08J 2333/12 (2013.01); C08J 2333/16 (2013.01);
Abstract

An aspect of the present invention is to provide a fluorine-based polymer showing a significantly low dielectric constant of less than 1.8 and a fluorine-based polymer composition including the same. The fluorine-based polymer provided in an aspect of the present invention shows a very low dielectric constant, wherein the polymer is not only a pollution-reducing material generating no harmful substance, but may also be utilized as a coating material in various fields due to high adhesiveness. Furthermore, a polymer film employing the polymer as a material has a volume resistance of about 5.8×10Ohmcm, showing an excellent resistance value as an insulating material.


Find Patent Forward Citations

Loading…