The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2026

Filed:

Jul. 27, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Yi-Chuan Teng, Hsinchu County, TW;

Ching-Kai Shen, Hsinchu County, TW;

Jung-Kuo Tu, Hsinchu City, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B81B 7/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81B 7/0035 (2013.01); B81C 1/00277 (2013.01); B81C 2203/0145 (2013.01); B81C 2203/019 (2013.01);
Abstract

A method for manufacturing a semiconductor structure is provided. The method includes the operations as follows. A first substrate having a top surface is received. A semiconductor layer is formed over the first substrate. A cavity is formed at the top surface of the semiconductor layer. A second substrate is bonded over the first substrate to cover the semiconductor layer. The second substrate has a through hole connected to the cavity of the semiconductor layer. A eutectic sealing structure is formed on the second substrate to cover the through hole. The eutectic sealing structure includes a first metal layer and a second metal layer eutectically bonded on the first metal layer.


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