The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Feb. 21, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hung-Yu Yen, Hsinchu, TW;
Keng-Chu Lin, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method for manufacturing a semiconductor device includes: forming on a substrate, a structure including a plurality of dielectric spacers and a plurality of dielectric portions that are disposed to form a plurality of recesses, such that each of the recesses is formed between a corresponding one of the dielectric spacers and a corresponding one of the dielectric portions; and subjecting the dielectric spacers and the dielectric portions to a plasma treatment process such that the dielectric spacers and the dielectric portions are deformed to form a plurality of capping portions to cap the recesses, respectively, so as to form a plurality of air gaps.