The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

Dec. 14, 2023
Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventors:

Takahiro Tamura, Matsumoto-city, JP;

Michio Nemoto, Matsumoto-city, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 8/60 (2025.01); H01L 21/02 (2006.01); H01L 21/22 (2006.01); H01L 21/225 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 21/285 (2006.01); H01L 21/761 (2006.01); H01L 21/77 (2017.01); H10D 12/00 (2025.01); H10D 12/01 (2025.01); H10D 62/10 (2025.01); H10D 62/17 (2025.01); H10D 62/53 (2025.01); H10D 62/60 (2025.01); H10D 64/27 (2025.01); H10D 64/64 (2025.01); H10D 84/00 (2025.01); H10D 84/60 (2025.01);
U.S. Cl.
CPC ...
H01L 21/761 (2013.01); H01L 21/02236 (2013.01); H01L 21/02255 (2013.01); H01L 21/221 (2013.01); H01L 21/2253 (2013.01); H01L 21/26513 (2013.01); H01L 21/266 (2013.01); H01L 21/28537 (2013.01); H01L 21/77 (2013.01); H10D 8/60 (2025.01); H10D 8/605 (2025.01); H10D 12/021 (2025.01); H10D 12/211 (2025.01); H10D 12/481 (2025.01); H10D 62/126 (2025.01); H10D 62/393 (2025.01); H10D 62/53 (2025.01); H10D 62/60 (2025.01); H10D 64/513 (2025.01); H10D 64/64 (2025.01); H10D 84/146 (2025.01); H10D 84/617 (2025.01);
Abstract

There is provided a diode including an anode electrode provided on a side of a front surface of a semiconductor substrate, an interlayer dielectric film disposed between the semiconductor substrate and the anode electrode, a first anode region of a first conductivity type provided on the front surface of the semiconductor substrate, a second anode region of a second conductivity type, which is different from the first conductivity type, provided on the front surface of the semiconductor substrate, a first contact hole provided in the interlayer dielectric film, causing the anode electrode to be in Schottky contact with the first anode region, and a second contact hole provided in the interlayer dielectric film and different from the first contact hole, causing the anode electrode to be in ohmic contact with the second anode region.


Find Patent Forward Citations

Quick Actions:

Tamura, Takahiro. (2026). Semiconductor device and manufacturing method thereof (U.S. Patent No. 12575390). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12575390

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