The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

Mar. 03, 2023
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventors:

Mitsutoshi Nakamura, Kawasaki Kanagawa, JP;

Masami Nagaoka, Ebina Kanagawa, JP;

Kazuya Nishihori, Tokyo, JP;

Keita Masuda, Kawasaki Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/60 (2025.01); H10D 64/27 (2025.01); H10D 86/00 (2025.01);
U.S. Cl.
CPC ...
H10D 64/518 (2025.01); H10D 30/605 (2025.01); H10D 86/201 (2025.01);
Abstract

A semiconductor device includes an insulating layer, a semiconductor layer and a control electrode. The semiconductor layer is provided on the insulating layer and includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type and a third semiconductor region of a second conductivity type. The third semiconductor region is located between the first semiconductor region and the second semiconductor region. The first to third semiconductor regions are arranged in a first direction along an interface between the insulating layer and the semiconductor layer. The control electrode is provided on the semiconductor layer and includes first to third control parts arranged in the first direction. The first control part is located between the second control part and the third control part. The third semiconductor region is positioned between the insulating layer and the first control part.


Find Patent Forward Citations

Nakamura, Mitsutoshi. (2026). Semiconductor device including control electrode with three control parts (U.S. Patent No. 12575163). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12575163

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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