The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Jul. 01, 2022
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Tzu-Ging Lin, Kaohsiung City, TW;
Chun-Liang Lai, Hsinchu City, TW;
Yun-Chen Wu, Hsinchu, TW;
Shun-Hui Yang, Taoyuan County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a substrate, a multi-gate FET device disposed over the substrate, a first isolation disposed in the substrate, and a second isolation disposed in the substrate. The multi-gate FET device includes a gate structure and epitaxial source/drain structures disposed at two sides of the gate structure. The first isolation includes a first portion and a second portion over the first portion. A top surface of the second portion is aligned with a top surface of the epitaxial source/drain structures. A width of the second portion is different from a width of the first portion.