The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Mar. 26, 2022
International Business Machines Corporation, Armonk, NY (US);
Heng Wu, Guilderland, NY (US);
Tenko Yamashita, Schenectady, NY (US);
Sanjay C. Mehta, Niskayuna, NY (US);
Junli Wang, Slingerlands, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A high density memory apparatus includes a plurality of transistors vertically stacked on top of each other. The plurality of transistors share a common source structure, but each of the plurality of transistors has its own horizontal nanosheet and gate stack that are separate from respective horizontal channel structures and gate stacks of the others of the plurality of transistors. Ends of the nanosheets distal from the gate stacks are doped to act as drains for the transistors. Each of a plurality of two-terminal memory units is electrically connected to the drain end of a corresponding one of the nanosheets. Some embodiments achieve in excess of 5000 memory bits/square micrometer (μm); in some embodiments, in excess of 6000 bits/μm.