The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

Dec. 28, 2022
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Zhenzhen Zhang, Wuhan, CN;

Longdong Liu, Wuhan, CN;

Ming Li, Wuhan, CN;

Ying Zhou, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 41/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 41/27 (2023.02);
Abstract

A three-dimensional memory device and a fabricating method thereof are disclosed. The method can comprise: forming a first stack structure on a substrate and a connecting layer on the first stack structure; forming an opening through the connecting layer and a first channel hole through the first stack structure, wherein the opening is interconnected with the first channel hole; etching the connecting layer using a dry etching process to enlarge the opening, and forming a filling structure in the enlarged opening and the first channel hole. A bottom aperture of the enlarged opening is larger than a top aperture of the first channel hole. The dry etching process comprises at least a first stage dry etching and a second stage dry etching using different Radio Frequency (RF) powers.


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