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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12575101 B1

PDFFull Text
Date of Patent:
Mar. 10, 2026

Filed:

Aug. 01, 2022

Vertical non-volatile memory with low resistance source contact

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Darwin A. Clampitt, Wilder, ID (US);

Wesley O. Mckinsey, Nampa, ID (US);

John Hopkins, Meridian, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

Holland & Hart LLP

Primary Examiner:

Wael M Fahmy

Assistant Examiner:

Aneesa Riaz Baig

Int. Cl.
CPC ...
H01L 23/498 (2006.01); G11C 5/06 (2006.01); G11C 16/04 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/495 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01); H10B 51/10 (2023.01); H10B 51/20 (2023.01); H10H 20/852 (2025.01); H10H 20/857 (2025.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); G11C 16/0483 (2013.01); H01L 21/76229 (2013.01); H01L 21/76232 (2013.01); H10B 41/27 (2023.02);
Abstract

For manufacturing a memory device, a system may form a trench between a first portion and a second portion of a stack. A bottom wall of the trench may include a spacer material. The system may remove a first and a second oxide material to reform the trench, and remove a polysilicon material in a lateral direction to expose a third oxide material and a channel structure. The third oxide material may form the bottom wall of the trench. The system may remove, in a lateral direction, the first oxide material, a portion of the second oxide material, the third oxide material, and a fourth oxide material of the channel structure. The system may deposit a metal material, in the trench, in contact with a doped polysilicon material of the channel structure.

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