The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

Dec. 19, 2022
Applicant:

Wuhan Xinxin Semiconductor Manufacturing Co., Ltd., Wuhan, CN;

Inventor:

Kaiwei Cao, Wuhan, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 41/27 (2023.01); G11C 16/14 (2006.01); H10B 41/10 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 41/27 (2023.02); G11C 16/14 (2013.01); H10B 41/10 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02);
Abstract

The present disclosure discloses a storage cell, a storage block and a memory. The storage cell includes a semiconductor assembly, a controlling gate, and at least one base electrode. The semiconductor assembly includes a source-region semiconductor, a drain-region semiconductor and a channel semiconductor. The channel semiconductor is arranged between the source-region semiconductor and the drain-region semiconductor, and is arranged side by side with the source-region semiconductor and the drain-region semiconductor. The controlling gate is arranged at one side of the semiconductor assembly, and corresponds to the channel semiconductor. The at least one base electrode is electrically connected to the other side of at least one of the source-region semiconductor and the drain-region semiconductor, corresponds to the at least one of the source-region semiconductor and the drain-region semiconductor, and is configured to be applied a base voltage.


Find Patent Forward Citations

Cao, Kaiwei. (2026). Storage cell, storage block, and memory (U.S. Patent No. 12575098). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12575098

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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