The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Nov. 25, 2022
United Microelectronics Corp., Hsinchu, TW;
Yu-Jen Yeh, Taichung, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
Provided are a flash memory and a manufacturing method thereof. In the flash memory, a first dielectric layer is disposed between a floating gate and a substrate. A second dielectric layer includes a first top surface away from the substrate, and covers the surface of the floating gate. A source region is disposed in the substrate at one side of the floating gate and in contact with the first dielectric layer. A drain region is disposed in the substrate at another side of the floating gate and separated from the first dielectric layer. An erase gate is disposed on the first top surface. A select gate is disposed on the substrate between the floating gate and the drain region. A third dielectric layer is disposed between the select gate and the substrate.