The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

Nov. 27, 2023
Applicant:

Yield Microelectronics Corp., Hsin-Chu County, TW;

Inventors:

Yu-Ting Huang, Hsin-Chu County, TW;

Chi-Pei Wu, Hsin-Chu County, TW;

Ya-Ting Fan, Hsin-Chu County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 17/12 (2006.01); H10B 20/00 (2023.01);
U.S. Cl.
CPC ...
H10B 20/387 (2023.02); G11C 17/12 (2013.01);
Abstract

A high-speed multi-write read only memory array includes word lines, select lines, bit lines, and sub-memory arrays. There are a first word line, a first select line, a second select line, a first bit line, a second bit line, a third bit line, and a fourth bit line. Each sub-memory array includes a first memory cell coupled to the first word line, the first select line, and the first bit line, a second memory cell coupled to the first word line, the first select line, and the second bit line, a third memory cell coupled to the first word line, the second select line, and the third bit line, and a fourth memory cell coupled to the first word line, the second select line, and the fourth bit line.


Find Patent Forward Citations

Huang, Yu-Ting. (2026). High-speed multi-write read only memory array (U.S. Patent No. 12575094). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12575094

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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