The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

Aug. 17, 2023
Applicant:

Changxin Memory Technologies, Inc., Hefei City, CN;

Inventors:

Yicheng Gao, Hefei, CN;

Jaeyong Cha, Hefei, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); G11C 11/4091 (2006.01); G11C 11/4094 (2006.01);
U.S. Cl.
CPC ...
H10B 12/50 (2023.02); G11C 11/4091 (2013.01); G11C 11/4094 (2013.01);
Abstract

A semiconductor structure and a memory are provided. The semiconductor structure includes multiple active regions, a column selector and multiple bit lines. The column selector includes a first gate, a second gate, a third gate, a fourth gate and a connection line. The first gate and the second gate intersect at a first node, the third gate and the fourth gate intersect at the second node, and the connection line connects the first node and the second node. Each of the multiple bit lines includes a first portion, a second portion and a connection portion. Each of the multiple bit lines is connected to a respective one of the multiple active regions, the active regions connected to different bit lines among the multiple bit lines are different.


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