Semiconductor structure and manufacturing method thereof

Abstract

Embodiments of the present disclosure relate to the field of semiconductors, and provide a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a base and a bit line that extends along a first direction; active structures, wherein the active structure includes at least two active layers arranged at intervals, the active layer includes a first source-drain region, a channel region, a second source-drain region, and a support region, and the bit line is connected to the first source-drain region; a word line extending along a second direction, wherein the word line is connected to an adjacent active structure, and the word line surrounds at least two channel regions included in the connected active structure; and a memory structure perpendicularly stacked on the base, where the memory structure is connected to the second source-drain region, and the memory structure surrounds the support region.