The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
May. 18, 2023
Intel Corporation, Santa Clara, CA (US);
Denzil Frost, Rio Rancho, ID (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Described herein are SRAM cells in which some transistors are implemented as thin film transistors (TFTs) while other transistors are implemented as non-TFTs (e.g., as FinFETs or nanoribbon-based transistors), where the TFTs are folded over non-TFTs to realize high-density 3D SRAM. For a given SRAM cell, either N-type transistors may be implemented as TFTs and stacked above P-type transistors that are implemented as non-TFTs, or P-type transistors may be implemented as TFTs and may be stacked above N-type transistors that are implemented as non-TFTs.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile