The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

Jan. 20, 2023
Applicant:

Carl Zeiss Smt Gmbh, Oberkochen, DE;

Inventors:

Achim Schoell, Kitzingen, DE;

Dirk Ehm, Beckingen, DE;

Yessica Brachthaeuser, Cologne, DE;

Thorsten Benter, Haan, DE;

Assignee:

CARL ZEISS SMT GMBH, Oberkochen, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 49/42 (2006.01);
U.S. Cl.
CPC ...
H01J 49/421 (2013.01);
Abstract

A residual gas analyser () for analysis of a residual gas (), in particular a residual gas in an EUV lithography system (), includes an inlet system () for admission of the residual gas from a vacuum environment () into the residual gas analyser, and a mass analyser () having a detector () for detecting ionized constituents () of the residual gas. The residual gas analyser includes an ion transfer device () for transferring the ionized constituents of the residual gas to the mass analyser, the ion transfer device having an ion filtering device () configured for filtering at least one ionic constituent () of the residual gas. Also disclosed is an EUV lithography system, in particular an EUV lithography apparatus, which includes at least one residual gas analyser configured as indicated above for analysing a residual gas in a vacuum environment of the EUV lithography system.


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