The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
May. 29, 2024
Applicant:
United Microelectronics Corp., Hsin-Chu City, TW;
Inventors:
Yi-Ning Peng, Miaoli County, TW;
Hsueh-Chun Hsiao, Hsinchu County, TW;
Tzu-Yun Chang, Hsinchu County, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu City, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 41/10 (2023.01); G11C 16/08 (2006.01); G11C 16/24 (2006.01); H10B 41/27 (2023.01); H10D 30/68 (2025.01);
U.S. Cl.
CPC ...
G11C 16/24 (2013.01); G11C 16/08 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10D 30/681 (2025.01);
Abstract
A method for forming semiconductor structure with wave shaped erase gate, the method including the steps: forming a floating gate having staggered islands on a substrate, forming a erase gate having a wave shape on the substrate at a first side of the floating gate, and forming a word line having the wave shape on the substrate at a second side of the floating gate opposite to the first side.
Peng, Yi-Ning. (2026). Method for forming semiconductor structure with wave shaped erase gate (U.S. Patent No. 12573458). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12573458
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile