The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Feb. 21, 2024
Micron Technology, Inc., Boise, ID (US);
Hui Ye, Shanghai, CN;
Micron Technology, Inc., Boise, ID (US);
Abstract
Memory systems and devices (and associated methods) with improved active performance loss (APL) completion detection are described herein. In one embodiment, a memory device comprises nonvolatile memory and logic configured to (i) write a first value to a first location in the nonvolatile memory, (ii) detect a power loss event corresponding to the memory device, and (iii) before powering down the memory device based at least in part on the detected power loss event, write a second value to a second location in the nonvolatile memory different from the first location. The first value and/or the second value can correspond to a current power cycle number of the memory device. After power is subsequently restored to the memory device, the logic can compare the first and second values and proceed with reconstructing the memory device using APL management data when the first value matches the second value.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile