The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

Jan. 03, 2024
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Jihye Gale Shin, Palo Alto, CA (US);

Kazuaki Ohara, Sunnyvale, CA (US);

Rachael R. Skreen, Meridian, CA (US);

Soujanya Venigalla, Newark, CA (US);

Rosa Maria Avila-Hernandez, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0679 (2013.01); G06F 3/061 (2013.01); G06F 3/0629 (2013.01); G06F 3/0634 (2013.01);
Abstract

Methods, systems, and devices for memory device operation are described. A register of a first memory die of multiple memory dies in a memory device may be configured to indicate that the first memory die has a first characteristic associated with a first set of performance criteria. Also, a register of a second memory die of the multiple memory dies may be configured to indicate that the second memory die has a second characteristic associated with a second set of performance criteria. Data received from a host device that is associated with the first set of performance criteria may be stored in the first memory die based on the first memory die having the first characteristic associated with the first set of performance criteria. In some examples, the registers store relative characteristics of the memory dies in relation to the other memory dies in the memory device.


Find Patent Forward Citations

Shin, Jihye. (2026). Memory device operation based on device characteristics (U.S. Patent No. 12572312). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12572312

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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