The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

Jul. 11, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ming Yang Jung, Kaohsiung City, TW;

Chewn-Pu Jou, Hsinchu, TW;

Stefan Rusu, Sunnyvale, CA (US);

Lan-Chou Cho, Hsinchu City, TW;

Tai-Chun Huang, Hsin-Chu City, TW;

You-Cheng Lu, Tainan City, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/225 (2006.01); G02F 1/01 (2006.01);
U.S. Cl.
CPC ...
G02F 1/2257 (2013.01); G02F 1/0147 (2013.01); G02F 2201/063 (2013.01); G02F 2203/15 (2013.01);
Abstract

A semiconductor device and a manufacturing method thereof are provided. The device includes a dielectric layer, a ring waveguide embedded in the dielectric layer, and an input/output (I/O) waveguide embedded in the dielectric layer and optically coupled to the ring waveguide in a vertical manner. Materials of the dielectric layer, the ring waveguide, and the I/O waveguide are different.


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