The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
May. 08, 2023
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Lee D. Whetsel, Parker, TX (US);
Baher S. Haroun, Allen, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/3177 (2006.01); G01R 31/26 (2020.01); G01R 31/317 (2006.01); G01R 31/3185 (2006.01);
U.S. Cl.
CPC ...
G01R 31/3177 (2013.01); G01R 31/26 (2013.01); G01R 31/31723 (2013.01); G01R 31/318505 (2013.01); G01R 31/318577 (2013.01);
Abstract
This disclosure describes a novel method and apparatus for testing TSVs within a semiconductor device. According to embodiments illustrated and described in the disclosure, a TSV may be tested by stimulating and measuring a response from a first end of a TSV while the second end of the TSV held at ground potential. Multiple TSVs within the semiconductor device may be tested in parallel to reduce the TSV testing time according to the disclosure.