The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Sep. 18, 2023
Ut-battelle, Llc, Oak Ridge, TN (US);
Ilia N. Ivanov, Oak Ridge, TN (US);
Ivan V. Vlassiouk, Oak Ridge, TN (US);
Dayrl P. Briggs, Oak Ridge, TN (US);
UT-BATTELLE, LLC, Oak Ridge, TN (US);
Abstract
A scalable method of synthesizing hexagonal boron nitride (hBN) films and nanotubes by chemical vapor deposition (CVD) is provided. The method includes atmospheric pressure CVD of hBN on metallic growth substrates using solid boron sources and molecular nitrogen. The solid boron source can be in the form of powder, fragments, or platelets and placed upstream, on top, or below the growth substrate. The growth substrate can include Fe, Ni, Cr, Cu, and their alloys including various steels. The growth atmosphere includes nitrogen compounds, inert gases and hydrogen. The reaction can occur within a reaction vessel heated to 800° C.-1200° C. in less than 120 minutes with sequential cooling at a controlled rate. In laboratory testing, the hBN film exhibited improved protection against harsh corrosion over long periods and resistance to high-temperature oxidation in air.