The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

May. 03, 2024
Applicants:

Applied Materials, Inc., Santa Clara, CA (US);

Wayne State University, Detroit, MI (US);

Inventors:

Thomas Joseph Knisley, Livonia, MI (US);

Daniel Wei Ming Beh, Detroit, MI (US);

Zachary J. Devereaux, Webberville, MI (US);

Avgerinos V. Gelatos, Scotts Valley, CA (US);

Jeffrey W. Anthis, Redwood City, CA (US);

Charles H. Winter, Bloomfield Hills, MI (US);

Assignees:

Applied Materials, Inc., Santa Clara, CA (US);

Wayne State University, Detroit, MI (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/42 (2006.01); C23C 16/44 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45553 (2013.01); C23C 16/42 (2013.01); C23C 16/4408 (2013.01);
Abstract

Methods for depositing molybdenum silicide films on a substrate are described. The substrate is exposed to a molybdenum- and silicon-containing precursor and a silane reactant to form the molybdenum silicide film. The exposures can be sequential or simultaneous. Inherent deposition selectivity of the process can be achieved through adjusting process parameters, particularly temperature or precursor dose, to produce more deposition on a metal material over a dielectric material.


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