The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2026

Filed:

Aug. 22, 2023
Applicant:

Alpha and Omega Semiconductor International Lp, Toronto, CA;

Inventors:

Yan Xun Xue, Los Gatos, CA (US);

Madhur Bobde, Sunnyvale, CA (US);

Long-Ching Wang, Cupertino, CA (US);

Zhiqiang Niu, Santa Clara, CA (US);

Lin Lv, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 21/28 (2025.01); H01L 21/304 (2006.01); H01L 23/00 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3114 (2013.01); H01L 21/28123 (2013.01); H01L 21/304 (2013.01); H01L 23/49816 (2013.01); H01L 24/13 (2013.01); H01L 24/29 (2013.01); H01L 24/97 (2013.01); H01L 2224/13007 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/97 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/1811 (2013.01);
Abstract

A chip scale semiconductor package comprises a silicon layer, a back side metal layer, and a plurality of front side pads. Each of the plurality of front side pads comprises a respective copper member and a respective solder member. A method comprises the steps of: providing a wafer; grinding the back side of the wafer forming a peripheral ring; applying a metallization process to a grinded surface; removing the peripheral ring; forming a front side seed layer; forming a front side photoresist layer; applying a photolithography process; applying a front side copper plating process; applying a front side solder plating process; stripping the front side photoresist layer; etching the front side seed layer; and applying a singulation process.


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