The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2026
Filed:
Jan. 17, 2023
Semiconductor Components Industries, Llc, Scottsdale, AZ (US);
Karthik Suresh Arulalan, Santa Clara, CA (US);
Jianfeng Wang, Santa Clara, CA (US);
Sharlene Wilson, Santa Clara, CA (US);
Mark Curtice, Santa Clara, CA (US);
Subhash Srinivas Pidaparthi, Santa Clara, CA (US);
Clifford Drowley, Santa Clara, CA (US);
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US);
Abstract
A method of forming regrown fiducials includes providing a III-V compound substrate having a device region and an alignment mark region. The III-V compound substrate is characterized by a processing surface. The method also includes forming a hardmask layer having a first set of openings in the device region exposing a first surface portion of the processing surface of the III-V compound substrate and a second set of openings in the alignment mark region exposing a second surface portion of the processing surface and etching the first surface portion and the second surface portion of the III-V compound substrate using the hardmask layer as a mask to form a plurality of trenches. The method also includes epitaxially regrowing a semiconductor layer in the trenches to form the regrown fiducials extending to a predetermined height over the processing surface in the alignment mark region.